IndiumV3, Main, Repository, bibRecord, 005388

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

Identifieur interne : 005388 ( Main/Repository ); précédent : 005387; suivant : 005389

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

Auteurs : RBID : Pascal:09-0309605

Descripteurs français

Pascal (Inist)
- Diode électroluminescente, Epitaxie, Métrologie surface, Planéité, Nanotechnologie, Croissance sélective, Piézoélectricité, Croissance cristalline, Longueur onde, Photoluminescence, Rayonnement visible.
Wicri :
- concept : Nanotechnologie.

English descriptors

KwdEn :
- Crystal growth, Epitaxy, Flatness, Light emitting diodes, Nanotechnology, Photoluminescence, Piezoelectricity, Selective growth, Surface metrology, Visible radiation, Wavelengths.

Abstract

In this article, we briefly review a particular approach to fabricate light-emitting diode (LED) structures on the semipolar side facets of triangular GaN stripes grown by selective area epitaxy. This approach enables a significant reduction of the internal piezoelectric fields in the LED's active area, while still maintaining the well-established c-direction as the main epitaxial growth direction for GaN-based devices on large area substrates. For the latter, these internal fields are responsible for the lower efficiency of GaN-based LEDs in the longer (green) wavelength range. The reduced internal fields of such semipolar LEDs can be directly determined by photoluminescence (PL) investigations on pre-biased LED structures and further confirmed by time-resolved PL studies. The epitaxial growth behavior is strongly facet-dependent, leading to different surface flatnesses on different semipolar facets formed by this procedure and different indium incorporation efficiencies. An increased indium uptake on semipolar {1101} facets as compared to conventional c-plane layers can help to shift the LED emission to longer wavelengths near 500 nm, despite the significantly reduced field-dependent Stark shift, which helps to reach the green wavelength range in polar LEDs.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 005431

Links to Exploration step

Pascal:09-0309605

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets</title>
<author><name sortKey="Scholz, Ferdinand" uniqKey="Scholz F">Ferdinand Scholz</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ulm University, Institute of Optoelectronics</s1>
<s2>89069 Ulm</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Tübingen</region>
<settlement type="city">Ulm</settlement>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Science and Engineering, Kyoto University</s1>
<s2>Katsura, Kyoto 615-8510</s2>
<s3>JPN</s3>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Katsura, Kyoto 615-8510</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Kyoto University Department of Electronic Science and Engineering</s1>
<s2>Kyoto 615-8510</s2>
<s3>JPN</s3>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Kyoto University Department of Electronic Science and Engineering</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>University of California, Santa Barbara, Materials Department</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Santa Barbara, CA 93106</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="07"><s1>University of California, Santa Barbara, ESB 3215C, SSLEC</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Santa Barbara, CA 93106</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="08"><s1>Soraa, Inc., 485 Pine Ave.</s1>
<s2>Goleta, CA 93117</s2>
<s3>USA</s3>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Goleta, CA 93117</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="09"><s1>University of California Santa Barbara, Materials Department</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Santa Barbara, CA 93106</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="10"><s1>Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7</s1>
<s2>10117 Berlin</s2>
<s3>DEU</s3>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Wunderer, Thomas" uniqKey="Wunderer T">Thomas Wunderer</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ulm University, Institute of Optoelectronics</s1>
<s2>89069 Ulm</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Tübingen</region>
<settlement type="city">Ulm</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Neubert, Barbara" uniqKey="Neubert B">Barbara Neubert</name>
</author>
<author><name sortKey="Feneberg, Martin" uniqKey="Feneberg M">Martin Feneberg</name>
</author>
<author><name sortKey="Thonke, Klaus" uniqKey="Thonke K">Klaus Thonke</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">09-0309605</idno>
<date when="2009">2009</date>
<idno type="stanalyst">PASCAL 09-0309605 INIST</idno>
<idno type="RBID">Pascal:09-0309605</idno>
<idno type="wicri:Area/Main/Corpus">005431</idno>
<idno type="wicri:Area/Main/Repository">005388</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0883-7694</idno>
<title level="j" type="abbreviated">MRS bull.</title>
<title level="j" type="main">MRS bulletin</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth</term>
<term>Epitaxy</term>
<term>Flatness</term>
<term>Light emitting diodes</term>
<term>Nanotechnology</term>
<term>Photoluminescence</term>
<term>Piezoelectricity</term>
<term>Selective growth</term>
<term>Surface metrology</term>
<term>Visible radiation</term>
<term>Wavelengths</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diode électroluminescente</term>
<term>Epitaxie</term>
<term>Métrologie surface</term>
<term>Planéité</term>
<term>Nanotechnologie</term>
<term>Croissance sélective</term>
<term>Piézoélectricité</term>
<term>Croissance cristalline</term>
<term>Longueur onde</term>
<term>Photoluminescence</term>
<term>Rayonnement visible</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nanotechnologie</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this article, we briefly review a particular approach to fabricate light-emitting diode (LED) structures on the semipolar side facets of triangular GaN stripes grown by selective area epitaxy. This approach enables a significant reduction of the internal piezoelectric fields in the LED's active area, while still maintaining the well-established c-direction as the main epitaxial growth direction for GaN-based devices on large area substrates. For the latter, these internal fields are responsible for the lower efficiency of GaN-based LEDs in the longer (green) wavelength range. The reduced internal fields of such semipolar LEDs can be directly determined by photoluminescence (PL) investigations on pre-biased LED structures and further confirmed by time-resolved PL studies. The epitaxial growth behavior is strongly facet-dependent, leading to different surface flatnesses on different semipolar facets formed by this procedure and different indium incorporation efficiencies. An increased indium uptake on semipolar {1101} facets as compared to conventional c-plane layers can help to shift the LED emission to longer wavelengths near 500 nm, despite the significantly reduced field-dependent Stark shift, which helps to reach the green wavelength range in polar LEDs.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0883-7694</s0>
</fA01>
<fA03 i2="1"><s0>MRS bull.</s0>
</fA03>
<fA05><s2>34</s2>
</fA05>
<fA06><s2>5</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Nonpolar and Semipolar Group III Nitride-Based Materials</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>SCHOLZ (Ferdinand)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>WUNDERER (Thomas)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>NEUBERT (Barbara)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>FENEBERG (Martin)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>THONKE (Klaus)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>SPECK (J. S.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>CHICHIBU (S. F.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Ulm University, Institute of Optoelectronics</s1>
<s2>89069 Ulm</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electronic Science and Engineering, Kyoto University</s1>
<s2>Katsura, Kyoto 615-8510</s2>
<s3>JPN</s3>
</fA14>
<fA14 i1="03"><s1>Institute of Semiconductor Physics, Ulm University</s1>
<s2>89069 Ulm</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Kyoto University Department of Electronic Science and Engineering</s1>
<s2>Kyoto 615-8510</s2>
<s3>JPN</s3>
</fA14>
<fA14 i1="05"><s1>University of California, Santa Barbara, Materials Department</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
</fA14>
<fA14 i1="06"><s1>SÜSS MicroTec Lithography GmbH</s1>
<s2>85748 Garching</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="07"><s1>University of California, Santa Barbara, ESB 3215C, SSLEC</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
</fA14>
<fA14 i1="08"><s1>Soraa, Inc., 485 Pine Ave.</s1>
<s2>Goleta, CA 93117</s2>
<s3>USA</s3>
</fA14>
<fA14 i1="09"><s1>University of California Santa Barbara, Materials Department</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
</fA14>
<fA14 i1="10"><s1>Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7</s1>
<s2>10117 Berlin</s2>
<s3>DEU</s3>
</fA14>
<fA15 i1="01"><s1>Materials Department, University of California</s1>
<s2>Santa Barbara, CA 93117</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Center for Advanced Nitride Technology, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira</s1>
<s2>Aoba, Sendai 980-8577</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA20><s1>328-333</s1>
</fA20>
<fA21><s1>2009</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>27202</s2>
<s5>354000188448120050</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2009 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>32 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>09-0309605</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>MRS bulletin</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this article, we briefly review a particular approach to fabricate light-emitting diode (LED) structures on the semipolar side facets of triangular GaN stripes grown by selective area epitaxy. This approach enables a significant reduction of the internal piezoelectric fields in the LED's active area, while still maintaining the well-established c-direction as the main epitaxial growth direction for GaN-based devices on large area substrates. For the latter, these internal fields are responsible for the lower efficiency of GaN-based LEDs in the longer (green) wavelength range. The reduced internal fields of such semipolar LEDs can be directly determined by photoluminescence (PL) investigations on pre-biased LED structures and further confirmed by time-resolved PL studies. The epitaxial growth behavior is strongly facet-dependent, leading to different surface flatnesses on different semipolar facets formed by this procedure and different indium incorporation efficiencies. An increased indium uptake on semipolar {1101} facets as compared to conventional c-plane layers can help to shift the LED emission to longer wavelengths near 500 nm, despite the significantly reduced field-dependent Stark shift, which helps to reach the green wavelength range in polar LEDs.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H20J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H55</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Diode électroluminescente</s0>
<s5>06</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Light emitting diodes</s0>
<s5>06</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie</s0>
<s5>07</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Epitaxy</s0>
<s5>07</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Métrologie surface</s0>
<s5>08</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Surface metrology</s0>
<s5>08</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Metrología superficie</s0>
<s5>08</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Planéité</s0>
<s5>09</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Flatness</s0>
<s5>09</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Planeidad</s0>
<s5>09</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Nanotechnologie</s0>
<s5>10</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Nanotechnology</s0>
<s5>10</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Croissance sélective</s0>
<s5>18</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Selective growth</s0>
<s5>18</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Piézoélectricité</s0>
<s5>19</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Piezoelectricity</s0>
<s5>19</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Croissance cristalline</s0>
<s5>20</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Crystal growth</s0>
<s5>20</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Longueur onde</s0>
<s5>21</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Wavelengths</s0>
<s5>21</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>22</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Rayonnement visible</s0>
<s5>23</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Visible radiation</s0>
<s5>23</s5>
</fC03>
<fN21><s1>222</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 005388 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 005388 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:09-0309605
   |texte=   GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri